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101.
Clusters Al2P2 n (n = 1–4) were theoretically investigated using density functional theory (DFT) methods at the B3LYP/6-311+G* and B3PW91/6-311+G* levels of theory. The calculated results showed that the planar structure (D 2h symmetry) of Al2P2 n (n = 1–4) species was the global minimum. And the negative nucleus-independent chemical shift (NICS) value of Al2P2 n (n = 1–4) species indicated the existence of a ring current in the planar structure (D 2h symmetry). A detailed molecular orbital (MO) analysis revealed that the planar structures (D 2h symmetry) had π aromaticity, which further exhibited the strongly aromatic character for Al2P2 n (n = 1–4) species.  相似文献   
102.
One-pot synthesis of benzylacetamide from oxime can be carried out in 80–95% yield at 35–40 °C under ultrasound irradiation. This method provided several advantages such as simple work-up procedure, shorter reaction time and higher yield.  相似文献   
103.
Excimer laser emitting at 248 nm is applied to produce microstructures on the surface of aluminum alloy. The surface morphology shows that hotspots and thermal fluidic structures both come to light. Two possible mechanisms of hotspots formation are proposed: near-field diffraction and interference, and extremely fast rapid thermal annealing. And for the formation of thermal fluidic pattern structure, a thin film model is applied.  相似文献   
104.
Composite CoFe2O4-BaTiO3 films were prepared by combining method of sol-gel and electrophoretic deposition. CoFe2O4 thick films were prepared by electrophoretic deposition method and then BaTiO3 precursor solution was spin-coated on these thick films to obtain dense structure. X-ray diffraction indicated that the films consisted of both spinel CoFe2O4 and perovskite BaTiO3 phase. Dielectric properties and leakage current conduction of the films were studied. Leakage current characterization of the films exhibits an Ohmic conduction behavior at lower electric field and space charge limited conduction behavior at higher electric field, respectively.  相似文献   
105.
Structure and magnetic properties of Nb-doped (FeZrB)100−xNbx alloy are investigated by X-ray diffraction (XRD), differential scanning calorimetry and vibrating sample magnetometer. The fully amorphous structure of the as-quenched ribbons is confirmed by the XRD pattern. With increasing Nb, the glass transition temperature and the onset crystallization temperature are increased, indicating increased stability of the amorphous structure. For x=1, the saturation magnetization of the ribbons is 125.7 emu/g and the optimized annealing temperature increases from 550 to 630 °C. The morphology of the crystallized phases is observed by scanning electron microscopy. The results show that nanocrystalline α-Fe grains are dispersed in the amorphous matrix.  相似文献   
106.
Two new coordination polymers, [Na(H2L)(H2O)2]n ( 1 ) and [Ba(H2L)2(H2O)]n ( 2 ) (H3L = 3‐formyl‐4‐hydroxybenzenesulfonic acid) were synthesized and structurally characterized. The H2L ligand shows three different bridging modes, μ3 in 1 , μ3 and μ4 in 2 . Compound 1 presents a 2D pillared structure, whereas 2 forms a 3D framework. Both 1 and 2 show blue luminescence at 380 nm in aqueous solution, however, their solid state emissions are at 406 and 446 nm, respectively.  相似文献   
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Huang  Yejing  Han  Xiufen  Yu  Xiao  Wang  Shumei  Zhai  Haiyun 《Chromatographia》2021,84(9):861-868
Chromatographia - A capillary electrophoresis-indirect laser-induced fluorescence detection method was established for neomycin detection in fish. With rhodamine 6G as the background fluorescent...  相似文献   
110.
Some deviant breakdown-quenching characteristics of silicon photomultipliers are demonstrated and their physical mechanisms are explored. “Twice breakdown” phenomenon, “flat-topped” avalanche pulses and the determination method of the real breakdown voltage of the detector are analyzed. These characteristics are explained by the integration model in terms of avalanche threshold current based on the Haitz's equivalent circuit model. The reasoning results show that the maximum over-voltage for a normal operating silicon photomultiplier equals the product of the avalanche threshold current and the quenching resistor of the avalanche photo-diode (APD) pixel, approximately. Moreover, the model and results can be extended to other small avalanche junctions with quenching resistor.  相似文献   
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